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RFMD Amplifies GaN-Based Line

RFMD (booth 2044) has introduced 11 new amplifiers, including six that are gallium nitride- (GaN-) based in support of the emerging DOCSIS 3.1 specifications.

RFMD’s DOCSIS 3.1 family includes 1.2 GHz power amplifiers as both hybrids and multi-chip modules that use GaN HEMT process technology and offer optimal linearity and output power while providing robust reliability.

The new D3.1-facing products include new power doubler amplifiers, push pull amplifiers, optical receivers, a reverse path amplifier, and a family of digital step attenuators. 

With the addition of these new products, RFMD said it now offers more than 25 products tailored for DOCSIS 3.1 applications.